EUV Print Check with Broadband Plasma Wafer Inspection

With extreme ultra violet (EUV) lithography now in the high volume manufacturing (HVM) phase, IC manufacturers are adopting comprehensive reticle re-qualification strategies to mitigate contamination risks. In addition to the standard optical reticle inspection method, alternative methodologies based on inspection of printed wafers are being adopted to reduce the yield risk caused by particle adders on the reticle. KLA has developed unique methods for high sensitivity repeater detection using broadband plasma (BBP) optical wafer inspection. BBP wafer inspection leverages a 190-260nm wavelength range that provides high sensitivity for critical defect types at high throughput required for reticle re-qualification in HVM. KLA’s print check solution enables unique repeater sensitivity by leveraging a combination of optical and customized algorithmic techniques to maximize signal, minimize overall noise and achieve sufficient signal to noise ratio. BBP EUV print check solution and KLA’s optical reticle inspection systems form a complementary reticle requalification solution that helps IC manufacturers minimize escape risk.