Platform for 2D Material Development

High quality 2H phase Tungsten and Molybdenum based 2D Transition Metal Dichalcogenides have high carrier mobilities at monolayer and bilayer thicknesses and can be an enabler of semiconductor technology scaling to smaller critical dimensions, including as ultrathin channel materials for transistor devices since they have field-effect mobilities up to ~180 cm2/(V s) [1] (and higher predicted mobilities). However, there have been no 300mm full wafer deposition methods for uniform TMD growth with high crystalline quality without exfoliation.

Leveraging different expertise and capabilities across EMD Electronics we have selected, screened, and characterized processes for growing ALD 300mm wafer-scale 2D TMD films in close collaboration with customers.

This team has screened 18 precursor combinations for their ALD 2H phase TMD deposition and quality metrics, leading to at least 4 high quality, uniform TMD deposition processes.

These TMD films have been characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM).

Our atomic scale ALD processing approach presented in this work offers a methodology for developing deposition of high-quality 2D materials uniformly over 300mm wafers

[1] ACS Nano 2014, 8, 7, 7180–7185, Publication Date:June 20, 2014, https://doi.org/10.1021/nn5021538