Silicon Carbide Power Module Packaging Using Direct Write Technology
The world is moving towards more and more electrification of transportation, hybrid systems, and renewable energy. The power electronics industry is constantly innovating to enable this electrification revolution. Wide bandgap semiconductors are one prime example of the advancements the industry has made in the last two decades. Flexible Hybrid Electronics (FHE) technologies have similarly made significant advancements in the last two decades and largely focused on sensors and flexible electronics. FHE for high power and high-performance power electronics is largely unexplored. With innovative co-design of power modules with FHE technology, and the application of advanced materials and manufacturing processes, SWaP-C (size, weight, and power – cost) improvements, new form factors, and new features/capabilities in power electronics can be achieved. This research aims to bridge the gap between current FHE technologies and high power electronics, where power electronics modules typically conduct 10s to 100s of amperes of current, block 100s to 1000s of volts, and operate in harsh environments (≥150°C, 10+ year life, shock, and vibration).
Power module packaging involves the interconnection and integration of power devices into a package to meet the required power (voltage, current), mechanical, thermal, reliability, and cost requirements. Typically, power devices in a power module are interconnected using wirebonds for electrical connection and filled with silicone gel for insulation. Technologies such as large diameter copper wirebonds, silver sintering, wirebondless interconnects, planar flex based packaging, etc. to improve the parasitic inductance and resistance, temperature capability, reliability, and thermal performance of new wide band gap power modules have been implemented to varying degrees of success. Today, most SiC power modules still follow the traditional packaging practices, largely due to established manufacturing infrastructure. This work aims to advance the use of direct write technology—materials and manufacturing processes in high-performance power electronics modules.
We will discuss the design, fabrication, and characterization approach for SiC power modules based on direct write technology. We will discuss the material considerations and present simulation and experimental data to support the co-design of SiC power modules using FHE techniques. The SiC power modules are targeted to have ratings of ≥1.2kV and >10s of amperes of current. While the work is focused on SiC power modules as a demonstration vehicle, the research and findings are applicable to power modules based on Si and GaN semiconductors. FHE techniques have largely been considered for low power, low temperature, and benign environments. This work aims to determine if FHE technologies are on-par with conventional manufacturing techniques in the high performance power electronics space and if they can offer unique capabilities that can deliver improvements in SWaP-C and product specific form factors. We will discuss our research towards this goal and discuss gaps in technology and approaches to bridge the gaps.
Arun V. Gowda*, Jeff Erlbaum, Han Xiong, Jason Benyeda GE Research, Niskayuna, NY
Mark Poliks, Mohammed Alhendi, March Schadt Binghamton University, Binghamton, NY
